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BSL307SP Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSL307SP Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page 20 14-01-09 Page 1 Rev 2.0 BSL307SP OptiMOS -P Small-Signal-Transistor Product Summary VDS -30 V RDS(on) 43 m Ω ID -5.5 A Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated PG-TSOP-6-1 5 6 4 1 3 2 Gate pin 3 Drain pin 1,2, Source pin 4 5,6 Marking sPC Type Package Tape and reel BSL307SP PG-TSOP-6-1 H6327: 3000pcs/r. Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -5.5 -4.4 A Pulsed drain current TA=25°C ID puls -22 Avalanche energy, single pulse ID=-5.5 A , VDD=-25V, RGS=25Ω EAS 44 mJ Reverse diode dv/dt IS=-5.5A, VDS=24V, di/dt=200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 2 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 • Qualified according to AEC Q101 ESD Class JESD22-A114-HBM Class 1 a • Halogen free according to IEC61249221 |
Similar Part No. - BSL307SP_14 |
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Similar Description - BSL307SP_14 |
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