P-Channel Enhancement Mode MOSFET

Copyright

 ANPEC Electronics Corp.

Rev. A.4 - Mar., 2003

APM9435

www.anpec.com.tw

1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

Applications

Portable Equipment and Battery Powered

Systems

SO

− 8

R

Symbol

Parameter

Rating

Unit

V

DSS

Drain-Source Voltage

-30

V

GSS

Gate-Source Voltage

±25

V

I

D

Maximum Drain Current – Continuous

T

-4.6

I

DM

Maximum Drain Current – Pulsed

-20

A

1

2

3

45

6

7

8

S

S

S

GD

D

D

D

P-Channel MOSFET

G

D

S

S

S

DD D

A P M 943 5

H andling C ode

Te m p . R a n g e

P a ck a ge C ode

P a ck age C ode

K : S O -8

O p eration Junction T e m p . R a nge

C : -55 to 150° C

H andling C ode

T U : T u b e

T R : T a p e & R e e l

A P M 9435

A P M 9435

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XXX XX - D a te Co d e