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NB3N1900KMNTXG Datasheet(PDF) 7 Page - ON Semiconductor |
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NB3N1900KMNTXG Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 21 page NB3N1900K www.onsemi.com 7 Table 8. ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Parameter Conditions Min Typ Max Unit VDDA 3.3 V Core Supply Voltage (Note 2) 4.6 V VDD 3.3 V Logic Supply Voltage (Note 2) 4.6 V VIL Input Low Voltage GND − 0.5 V VIH Input High Voltage Except for SMBus interface VDD + 0.5 V VIHSMB Input High Voltage SMBus clock and data pins 5.5 V Ts Storage Temperature −65 150 °C TJ Junction Temperature 125 °C Tc Case Temperature 130 °C ESD ESD protection Human Body Model 2000 V qJA Thermal Resistance Junction−to−Ambient Still air 18.1 °C/W qJC Thermal Resistance Junction−to−Case 5.0 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Guaranteed by design and characterization, not tested in production. 2. Operation under these conditions is neither implied nor guaranteed. |
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