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IDT70T35L25BF Datasheet(PDF) 8 Page - Integrated Device Technology |
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IDT70T35L25BF Datasheet(HTML) 8 Page - Integrated Device Technology |
8 / 21 page 6.42 IDT70T35/34L(IDT70T25/24L) PRELIMINARY High-Speed 2.5V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM Industrial and Commercial Temperature Ranges 8 Absolute Maximum Ratings(1) Maximum Operating Temperature and Supply Voltage(1) Capacitance(1) (TA = +25°C, f = 1.0MHz) Recommended DC Operating Conditions NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD+ 0.3V. 3. Ambient Temperature Under DC Bias. No AC Conditions. Chip Deselected. NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dV references the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. NOTE: 1. This is the parameter TA. This is the "instant on" case temperature. NOTES: 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed VDD + 0.3V. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV) NOTE: 1. At VDD < 2.0V leakages are undefined. Symbol Rating Commercial & Industrial Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +3.6 V TBIAS(3) Temperature Under Bias -55 to +125 oC TSTG Storage Temperature -65 to +150 oC TJN Junction Temperature +150 oC IOUT DC Output Current 50 mA 5639 tbl 04 Grade Ambient Temperature GND VDD Commercial 0OC to +70OC0V 2.5V + 100mV Industrial -40OC to +85OC0V 2.5V + 100mV 5639 tbl 05 Symbol Parameter Min. Typ. Max. Unit VDD Supply Voltage 2.4 2.5 2.6 V VSS Ground 0 0 0 V VIH Input High Voltage 1.7 ____ VDD+0.3(2) V VIL Input Low Voltage -0.3(1) ____ 0.7 V 5639 tbl 06 Symbol Parameter Conditions(2) Max. Unit CIN Input Capacitance VIN = 3dV 9 pF COUT Output Capacitance VOUT = 3dV 10 pF 5639 tbl 07 Symbol Parameter Test Conditions 70T35/34L (70T25/24L) Unit Min. Max. |ILI| Input Leakage Current (1) VDD = 2.6V, VIN = 0V to VDD ___ 5µ A |ILO| Output Leakage Currentt (1) CE = VIH, VOUT = 0V to VDD ___ 5µ A VOL Output Low Voltage IOL = +2mA ___ 0.4 V VOH Output High Voltage IOH = -2mA 2.0 ___ V 5639 tbl 08 |
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