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MBR10150LCT Datasheet(PDF) 1 Page - Chongqing Pingwei Enterprise co.,Ltd |
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MBR10150LCT Datasheet(HTML) 1 Page - Chongqing Pingwei Enterprise co.,Ltd |
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1 / 1 page - 页码 - Rev. 14-1 http:// www.perfectway.cn MBR1045L(F,B,H)CT thru MBR10200L(F,B,H)CT 10A Schottky Barrier Rectifier FEATURE High current capability Low forward voltage drop Low power loss, high efficiency High surge capability High ESD capability High temperature soldering guaranteed: 260°C/10s/0.25"(6.35mm) from case MECHANICAL DATA Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Mounting position: any TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. TO-220AB ITO-220AB MBR10XXLCT MBR10XXLFCT TO-263 TO-262 MBR10XXLBCT MBR10XXLHCT Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS Parameter Symbol MBR1045 LCT MBR1060 LCT MBR10100 LCT MBR10150 LCT MBR10200 LCT units Maximum Recurrent Peak Reverse Voltage VRRM 45 60 100 150 200 V Maximum RMS Voltage VRMS 32 42 70 105 140 V Maximum DC Blocking Voltage VDC V Maximum Average Forward Rectified Current at TC=90°C total device IF(AV) 10.0 A per diode 5.0 Peak Forward Surge Current 8.3ms Single Half sine-wave superimposed on rate load per diode (JEDEC method) IFSM 120 A Junction Capacitance (Note1) CJ 700 300 pF Storage Temperature Range TSTG -55 to +150 °C Operation Temperature Range TJ -55 to +150 °C ELECTRONICAL CHARACTERISTICS Parameter Symbol MBR1045 LCT MBR1060 LCT MBR10100 LCT MBR10150 LCT MBR10200 LCT units Maximum Forward Voltage Drop per diode at 5A (Note 2) VF 0.55 0.65 0.80 0.85 0.90 V Maximum DC Reverse Current at rated DC blocking voltage (Note 2) @ TC =25°C IR 0.15 0.1 mA @ TC=100°C 40.0 20.0 THERMAL CHARACTERISTICS Parameter Symbol ITO-220 TO-220 TO-262 TO-263 units Typical Thermal Resistance (Note 3) Rth (JC) 3.5 2.5 2.5 °C/W Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc. 2. Pulse test: 300 μs pulse width, 1% duty cycle. 3. Thermal Resistance from Junction to Case Mounted on heatsink. |
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