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TMS28F010A-12C3FME4 Datasheet(PDF) 9 Page - Texas Instruments |
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TMS28F010A-12C3FME4 Datasheet(HTML) 9 Page - Texas Instruments |
9 / 22 page TMS28F010A 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 program-verify command The TMS28F010A can be programmed sequentially or randomly because it is programmed one byte at a time. Each byte must be verified after it is programmed. The program-verify operation prepares the device to verify the most recently programmed byte. To invoke the program-verify operation, C0h must be written into the command register. The program-verify operation ends on the rising edge of W. While verifying a byte, the TMS28F010A applies an internal margin voltage to the designated byte. If the true data and programmed data match, programming continues to the next designated byte location; otherwise, the byte must be reprogrammed. Figure 1 shows how commands and bus operations are combined for byte programming. reset command To reset the TMS28F010A after set-up-erase command or set-up-program command operations without changing the contents in memory, write FFh into the command register two consecutive times. After executing the reset command, a valid command must be written into the command register to change to a new state. Fastwrite algorithm The TMS28F010A is programmed using the Texas Instruments Fastwrite algorithm shown in Figure 1. This algorithm programs in a nominal time of two seconds. Fasterase algorithm The TMS28F010A is erased using the Texas Instruments Fasterase algorithm shown in Figure 2. The memory array needs to be completely programmed (using the Fastwrite algorithm) before erasure begins. Erasure typically occurs in one second. parallel erasure To reduce total erase time, several devices can be erased in parallel. Since each Flash EEPROM can erase at a different rate, every device must be verified separately after each erase pulse. After a given device has been successfully erased, the erase command should not be issued to this device again. All devices that complete erasure should be masked until the parallel erasure process is finished (see Figure 3). Examples of how to mask a device during parallel erase include driving the E pin high, writing the read command (00h) to the device when the others receive a set-up-erase or erase command, or disconnecting it from all electrical signals with relays or other types of switches. |
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