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TPS78928DBVT Datasheet(PDF) 1 Page - Texas Instruments |
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TPS78928DBVT Datasheet(HTML) 1 Page - Texas Instruments |
1 / 16 page TPS78915, TPS78918, TPS78925, TPS78928, TPS78930 ULTRALOW-POWER LOW-NOISE 100-mA LOW-DROPOUT LINEAR REGULATORS SLVS300A – SEPTEMBER 2000 – REVISED MAY 2001 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D 100-mA Low-Dropout Regulator D Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V D Output Noise Typically 56 µVRMS (TPS78930) D Only 17 µA Quiescent Current at 100 mA D 1 µA Quiescent Current in Standby Mode D Dropout Voltage Typically 115 mV at 100 mA (TPS78930) D Over Current Limitation D –40°C to 125°C Operating Junction Temperature Range D 5-Pin SOT-23 (DBV) Package description The TPS789xx family of low-dropout (LDO) voltage regulators offers the benefits of low-dropout voltage, ultralow-power operation, low-output noise, and miniaturized packaging. These regulators feature low-dropout voltages and ultralow quiescent current compared to conventional LDO regulators. An internal resistor, in conjunction with an external bypass capacitor, creates a low-pass filter to reduce the noise. The TPS78930 exhibits only 56 µVRMS of output voltage noise using 0.01 µF bypass and 10 µF output capacitors. Offered in a 5-terminal small outline integrated-circuit SOT-23 package, the TPS789xx series devices are ideal for micropower operations, low output noise, and where board space is limited. The usual PNP pass transistor has been replaced by a PMOS pass element. Because the PMOS pass element behaves as a low-value resistor, the dropout voltage is very low, typically 115 mV at 100 mA of load current (TPS78930), and is directly proportional to the load current. The quiescent current is ultralow (17 µA typically) and is stable over the entire range of output load current (0 mA to 100 mA). Intended for use in portable systems such as laptops and cellular phones, the ultralow-dropout voltage feature and ultralow-power operation result in a significant increase in system battery operating life. Copyright 2001, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 3 2 4 5 DBV PACKAGE (TOP VIEW) 1 IN GND EN OUT BYPASS f – Frequency – Hz 1k 10k 100k IO = 1 mA VI = 4 V Co = 4.7 µF C(byp) = 0.1 µF 0 1000 200 400 600 1200 800 100 IO = 100 mA TPS78930 OUTPUT SPECTRAL NOISE DENSITY vs FREQUENCY TJ – Junction Temperature – °C 14 21 TPS78930 GROUND CURRENT vs JUNCTION TEMPERATURE VI = 4 V Co = 4.7 µF 20 19 18 17 16 15 IO = 1 mA IO = 100 mA –40 5 –25 20 35 65 110 125 50 –10 80 95 |
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