Electronic Components Datasheet Search |
|
TMS28F512A-12 Datasheet(PDF) 6 Page - Texas Instruments |
|
TMS28F512A-12 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 21 page TMS28F512A 65536 BY 8-BIT FLASH MEMORY SMJS514C – FEBRUARY 1994 – REVISED AUGUST 1997 6 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 command register The command register controls the program and erase functions of the TMS28F512A. The algorithm-selection mode can be activated using the command register in addition to the previously described method. When VPP is high, the contents of the command register and the function being performed can be changed. The command register is written to when E is low and W is pulsed low. The address is latched on the leading edge of the pulse, while the data is latched on the trailing edge. Accidental programming or erasure is minimized because two commands must be executed to invoke either operation. power supply considerations Each device should have a 0.1- µF ceramic capacitor connected between VCC and VSS to suppress circuit noise. Changes in current drain on VPP require it to have a bypass capacitor as well. Printed circuit traces for both power supplies should be appropriate to handle the current demand. command definitions See Table 3 for command definitions. Table 3. Command Definitions COMMAND REQUIRED BUS FIRST BUS CYCLE SECOND BUS CYCLE COMMAND BUS CYCLES OPERATION† ADDRESS DATA OPERATION† ADDRESS DATA Read 1 Write X 00h Read RA RD Algorithm-Selection Mode 3 Write X 90h Read 0000 0001 89h B8h Set-Up-Erase / Erase 2 Write X 20h Write X 20h Erase Verify 2 Write EA A0h Read X EVD Set-Up-Program / Program 2 Write X 40h Write PA PD Program Verify 2 Write X C0h Read X PVD Reset 2 Write X FFh Write X FFh † Modes of operation are defined in Table 1 Legend: EA Address of memory location to be read during erase verify EVD Data read from location EA during erase verify PA Address of memory location to be programmed. Address is latched on the falling edge of W. PD Data to be programmed at location PA. Data is latched on the rising edge of W. PVD Data read from location PA during program verify RA Address of memory location to be read RD Data read from location RA during the read operation read command Memory contents can be accessed while VPP is high or low. When VPP is high, writing 00h into the command register invokes the read operation. When the device is powered up, the default contents of the command register are 00h and the read operation is enabled. The read operation remains enabled until a different valid command is written to the command register. algorithm-selection-mode command The algorithm-selection mode is activated by writing 90h into the command register. The manufacturer equivalent code (89h) is identified by the value read from address location 0000h, and the device equivalent code (B8h) is identified by the value read from address location 0001h. |
Similar Part No. - TMS28F512A-12 |
|
Similar Description - TMS28F512A-12 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |