NB3F8L3010C_16 datasheet(5/13 Pages) ONSEMI

Part #	NB3F8L3010C

Description	3:1:10 LVCMOS Fanout Buffer

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Manufacturer	ONSEMI [ON Semiconductor]

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NB3F8L3010C

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5

Table 9. POWER SUPPLY DC CHARACTERISTICS VDD = 3.3 V ± 5% (3.135 V to 3.465 V) or VDD = 2.5 V ±5% (2.375 V to

2.625 V) and VDDOn = 3.3 V ± 5% (3.135 V to 3.465 V) or 2.5 V ± 5% (2.375 V to 2.625 V) or 1.8 V ± 0.2 V (1.6 V to 2.0 V) or 1.5 V ±

0.15 V (1.35 V to 1.65 V); TA = −40°C to 85°C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

IDD

VDD Power Supply

Current

OE = 0, no load

3.3 V

± 5%; VDDOn = 3.3 V ± 5% or 2.5 V ± 5% or

1.8 V

± 0.2 V or 1.5 V ± 0.15 V

2.5 V

± 5%; VDDOn = 2.5 V ± 5% or 1.8 V ± 0.2 V

or 1.5 V

± 0.15 V

30

50

mA

IDDO

VDDO Power Supply

Current

OE = 0, no load

3.3 V

± 5%; VDDOn = 3.3 V ± 5% or 2.5 V ± 5% or

1.8 V

± 0.2 V or 1.5 V ± 0.15 V

2.5 V

± 5%; VDDOn = 2.5 V ± 5% or 1.8 V ± 0.2 V

or 1.5 V

± 0.15 V

5

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm.

Table 10. DC CHARACTERISTICS TA = −40°C to 85°C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VIH

LVCMOS / LVTTL Input High Voltage

(OE, SELx)

VDD = 3.3 V ±5%

VDD = 2.5 V ± 5%

2

1.7

VDD + 0.3

V

VIL

LVCMOS / LVTTL Input Low Voltage

(OE, SELx)

VDD = 3.3 V ±5%

VDD = 2.5 V ± 5%

−0.3

0.8

0.7

V

IIH

Input High Current

OE, SELx,

CLKx/CLKx

VDD = VIN = 3.465 V

VDD = VIN = 3.465 V or 2.625 V

150

mA

IIL

Input Low Current

OE, SELx

CLKx

VDD = 3.465 V; VIN = 0.0 V

VDD = 3.465 V or 2.625 V VIN = 0.0 V

−5

−150

mA

VOH

Output High Voltage (Note 4)

VDDOn = 3.3 V ± 5%

2.6

V

VDDOn = 2.5 V ± 5%

1.8

VDDOn = 1.8 V ± 0.2 V

1.2

VDDOn = 1.5 V ± 0.15 V

0.9

VOL

Output Low Voltage (Note 4)

VDDOn = 3.3 V ± 5% or 2.5 V ± 5%

0.5

V

VDDOn = 1.8 V ± 0.2 V

0.4

VDDOn = 1.5 V ± 0.15 V

0.37

VPP

Peak−to−Peak Input Voltage

VIL > −0.3 V

CLKx/CLKx

VDD = 3.3 V ±5% or VDD = 2.5 V ± 5%

0.15

1.3

V

VIHCMR

Input High Level Common Mode

Range

VCM = VIH; VIL > −0.3 V CLKx/CLKx

VDD = 3.3 V ±5% or VDD = 2.5 V ± 5%

0.5

VDD − 0.85

V

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm.

4. Outputs terminated with 50

W to VDDOn/2. See Parameter Measurement Information..

Table 11. AC CHARACTERISTICS VDD = 3.3 V ± 5% (3.135 V to 3.465 V) or VDD = 2.5 V ±5% (2.375 V to 2.625 V) and

VDDOn = 3.3 V ± 5% (3.135 V to 3.465 V) or 2.5 V ± 5% (2.375 V to 2.625 V) or 1.8 V ± 0.2 V (1.6 V to 2.0 V) or 1.5 V ± 0.15 V (1.35 V

to 1.65 V); TA = −40°C to 85°C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

fMAX

Output Frequency

Using External

Crystal

10

50

MHz

Using External

Clock Source

(Note 5)

DC

200

MHz

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