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TQ2H-L2-2M-4.5V Datasheet(PDF) 1 Page - Nais(Matsushita Electric Works)

Part # TQ2H-L2-2M-4.5V
Description  LOW PROFILE 2 FORM C RELAY
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Manufacturer  NAIS [Nais(Matsushita Electric Works)]
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TQ2H-L2-2M-4.5V Datasheet(HTML) 1 Page - Nais(Matsushita Electric Works)

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133
TQ-RELAYS
LOW PROFILE
2 FORM C RELAY
9
.354
26.7
1.051
5
.197
+0.4
–0.2
+.016
–.008
mm inch
9
.354
14
.551
5
.197
+0.4
–0.2
+.016
–.008
FEATURES
• High sensitivity:
2 Form C: 140 mW power consumption (single side stable type)
4 Form C: 280 mW power consumption (single side stable type)
• Surge voltage withstand: 1500 V FCC Part 68
• Sealed construction allows automatic washing
• Self-clinching terminal also available
• M.B.B. contact types available
SPECIFICATIONS
Contact
Characteristics
Standard
(B.B.M) type
M.B.B.type
Arrangement
2 Form C
4 Form C
2 Form D
Initial contact resistance, max.
(By voltage drop 6 V DC 1A)
50 m
Contact material
Gold-clad silver
Rating
Nominal switching capacity
(resistive load)
1 A 30 V DC
0.5 A 125 V AC
1 A 30 V
DC
Max. switching power
(resistive load)
30 W, 62.5 V A
30 W
Max. switching voltage
110 V DC, 125 V AC
110 V DC
Max. switching current
1 A
Min. switching capacity f1
10
µA 10 mV DC
Nominal
operating
power
Single side stable
140 mW
(3 to 12 V DC)
200 mW
(24 V DC)
300 mW
(48 V DC)
280 mW
(3 to 24 V DC)
400 mW
(48 V DC)
200 mW
1 coil latching
100 mW
(3 to 12 V DC)
150 mW
(24 V DC)
200 mW
2 coil latching
200 mW
(3 to 12 V DC)
300 mW
(24 V DC)
400 mW
Expected
life (min.
opera-
tions)
Mechanical (at 180 cpm)
108
107
Electrical
(at 20 cpm)
(1 A 30 V DC
resistive)
1 A 30 V DC
resistive
2
×105
105
0.5 A 125 V AC
resistive
105
Standard
(B.B.M) type
M.B.B.type
Initial insulation resistance*1
Min. 1,000 M
Ω (at 500 V DC)
Initial
breakdown
voltage
Between open
contacts
750 Vrms for 1 min.
(Detection current:
10 mA)
300 Vrms for 1 min.
(Detection current:
10 mA)
Between contact
and coil
1,000 Vrms for 1 min.
(Detection current: 10 mA)
Between contact
sets
1,000 Vrms for 1 min.
(Detection current: 10 mA)
FCC surge voltage between open
contacts
1,500 V
Operate time [Set time]*3
(at 20
°C)
Max. 3 ms (Approx. 2 ms)
[Max. 3 ms (Approx. 2 ms)]
Release time [Reset time]*4
(at 20
°C)
Max. 3 ms (Approx. 1 ms)
[Max. 3 ms (Approx. 2 ms)]
M.B.B. time*8
Min. 10
µs.
Temperature rise*2 (at 20
°C)
Max. 50
°C
Shock resistance
Functional*5
Min. 490 m/s2 {50G}
Destructive*6
Min. 980 m/s2 {100G}
Vibration
resistance
Functional*7
176.4 m/s2 {18G}, 10 to 55 Hz
at double amplitude of 3 mm
Destructive
294 m/s2 {30G}, 10 to 55 Hz
at double amplitude of 5 mm
Conditions for
operation, trans-
port and storage*9
(Not freezing and
condensing at low
temperature)
Ambient
temperature
–40
°C to +70°C
–40
°F to +158°F
–40
°C to +50°C
–40
°F to +122°F
Humidity
5 to 85% R.H.
Unit weight
2 Form C:
Approx. 1.5 g .053 oz
4 Form C:
Approx. 3 g .106 oz.
Note:
f1This value can change due to the switching frequency, environmental conditions,
and desired reliability level, therefore it is recommended to check this with the ac-
tual load.
Remarks
* Specifications will vary with foreign standards certification ratings.
*1 Measurement at same location as "Initial breakdown voltage" section.
*2 By resistive method, nominal voltage applied to the coil; contact carrying current:
1 A.
*3 Nominal voltage applied to the coil, excluding contact bounce time.
*4 Nominal voltage applied to the coil, excluding contact bounce time without diode.
*5 Half-wave pulse of sine wave: 11 ms; detection time: 10
µs.
*6 Half-wave pulse of sine wave: 6 ms.
*7 Detection time: 10
µs.
*8 M.B.B. time:
*9 Refer to 4. Conditions for operation, transport and storage mentioned in Cautions
for use (Page 178).
Measuring
condition
Min. 10
µs
500
5 V DC
TESTING


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