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MIC94052BC6 Datasheet(PDF) 3 Page - Micrel Semiconductor

Part # MIC94052BC6
Description  84m廓 P-Channel MOSFET in SC-70-6
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Manufacturer  MICREL [Micrel Semiconductor]
Direct Link  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MIC94052BC6 Datasheet(HTML) 3 Page - Micrel Semiconductor

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June 2008
3
M9999-060508
MIC94052/53
Absolute Maximum Ratings (Note 1)
Drain-Source Voltage (VDS) ..........................................–6V
Gate-Source Voltage (VGS) ...........................................–6V
Continuous Drain Current (ID)
Note 3
TA = 25°C................................................................... ±2A
TA = 85°C................................................................ ±1.4A
Pulsed Drain Current (IDP) Note 3 ................................ ±6A
Continous Diode Current (IS) Note 7........................ –50mA
Power Dissipation
Note 3
SC-70-6 lead (TA = 85°C) ....................................270mW
Ambient Storage Temperature (TS).......... –55°C to +150°C
ESD Rating
Note 4
Operating Ratings (Note 2)
Input Voltage Range.........................................1.8V to 5.5V
Junction Temperature Range (TJ) ............ –40°C to +150°C
Package Thermal Impedance
Note 3
θJA SC-70-6 lead ..............................................240°C/W
Electrical Characteristics
TA = 25°C, unless otherwise specified. Bold values indicate –40°C≤TJ≤+150°C.
Symbol
Parameter
Condition
Min
Typ
Max
Units
Static
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250µA
–0.5
–1.2
V
IGSS
Gate Body Leakage
VDS = 0V, VGS = –5.5V
100
nA
(MIC94052 only)
RGS
Gate-Source Resistance
VDS = 0V, VGS = –5.5V
250
400
550
kΩ
(MIC94053 only)
IDSS
Zero Gate Voltage Drain
VDS = –5.5V, VGS = 0V
–1
µA
Current
TJ = +85°C
–5
µA
RDS(ON)
Drain-Source On-Resistance
VGS = –4.5V, IDS = –100 mA
70
84
mΩ
Note 8
VGS = –3.6V, IDS = –100 mA
76
110
mΩ
VGS = –2.5V, IDS = –100 mA
92
130
mΩ
VGS = –1.8V, IDS = –100 mA
125
180
mΩ
Dynamic, Note 6
td(on)
Turn-On Delay Time
VDD = –5V, ID = –0.5A, VGS = –4.5V,
15
ns
RGEN = 50Ω
tr
Turn-On Rise Time
VDD = –5V, ID = –0.5A, VGS = –4.5V,
15
ns
RGEN = 50Ω
td(off)
Turn-Off Delay Time
VDD = –5V, ID = –0.5A, VGS = –4.5V,
60
ns
RGEN = 50Ω
tf
Turn-Off Fall Time
VDD = –5V, ID = –0.5A, VGS = –4.5V,
20
ns
RGEN = 50Ω
Note 1. TA = 25°C unless otherwise noted. Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical
specifications do not apply when operating the device outside of its operating ratings.
Note 2. This device is not guaranteed to operate beyond its specified operating rating.
Note 3. Mounted on 1 square-inch pad of 2 oz. copper.
Note 4. IC devices are inherently ESD sensitive. Handling precautions required.
Note 5. Pulse test; pulse width = 300µs, duty cycle = 2%.
Note 6. Guaranteed by design.
Note 7. Body diode current conduction is not recommended.
Note 8. Ensure that all drain pins are connected together to optimize RDS(ON) perfomance.


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