PTFA091503ELV4R250 datasheet(4/11 Pages) INFINEON

Part #	PTFA091503ELV4R250

Description	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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4 / 11 page

PTFA091503EL

Data Sheet

4 of 11

Rev. 04, 2016-06-16

Typical Performance (cont.)

Broadband Circuit Impedance

Frequency

Z Source W

Z Load W

MHz

R

jX

R

jX

910

1.08

–1.2

2.88

–1.0

920

1.12

–0.9

2.87

–0.7

930

1.15

–0.8

2.87

–0.6

940

1.16

–0.6

2.88

–0.4

950

1.21

–0.4

2.88

–0.3

960

1.28

–0.3

2.9

–0.1

970

1.33

–0.2

2.9

0.1

0.3

0.2

0.4

Nornalized to 50 Ohms

a091503efl-v4/1

ga091503eflV4x1 Apr. 21, 2009 3:59:01 PM

Z Load

910 1.08 -1.17

920 1.12 -0.94

930 1.15 -0.76

940 1.16 -0.60

950 1.21 -0.43

960 1.28 -0.33

970 1.33 -0.19

Z Source

970 MHz

910 MHz

Z0 = 50 W

Z Source

Z Load

G

S

D

-80

-70

-60

-50

-40

-30

0

10

20

30

40

50

30

35

40

45

50

Output Power (dBm), Avg.

IS-95 CDMA Performance

VDD = 30 V, IDQ = 1.25A, ƒ = 960 MHz

Adj 750 kHz

Alt1 1.98 MHz

Efficiency

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PTFA091503ELV4R250 Datasheet(PDF) 4 Page - Infineon Technologies AG

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