PTFB212507SHV2R2 datasheet(4/13 Pages) INFINEON

Part #	PTFB212507SHV2R2

Description	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 13 page

PTFB212507SH

Data Sheet

4 of 13

Rev. 03, 2015-10-30

Typical Performance (cont.)

0

10

20

30

40

50

60

15

16

17

18

19

20

21

35

40

45

50

55

Output Power (dBm)

Power Sweep, CW

Gain & Efficiency vs. Output Power

V

DD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz

Gain -10°C

Gain +25°C

Gain +85°c

Efficiency -10°C

Efficiency +25°C

Efficiency +85°C

15

16

17

18

19

20

35

40

45

50

55

Output Power (dBm)

CW Performance

Gain vs. Output Power

V

DD = 28 V, ƒ = 2170 MHz

I

DQ = 1.62 A

I

DQ = 2.187 A

I

DQ = 1.05 A

-80

-70

-60

-50

-40

-30

-20

35

40

45

50

55

Output Power, PEP (dBm)

Two-tone Intermodulation Distortion

vs. Output Power

V

DD = 28 V, IDQ = 1.6 A,

ƒ1 = 2170 MHz, ƒ2 = 2169 MHz

3rd Order

7th

5th

0

10

20

30

40

50

60

14

15

16

17

18

19

37

39

41

43

45

47

49

51

53

55

Output Power (dBm)

Power Sweep, CW

Gain & Efficiency vs. Output Power

V

DD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz

Efficiency

Gain

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PTFB212507SHV2R2 Datasheet(PDF) 4 Page - Infineon Technologies AG

PTFB212507SHV2R2 Datasheet(HTML) 4 Page - Infineon Technologies AG

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