PTFB212507SH datasheet(2/13 Pages) INFINEON

Part #	PTFB212507SH

Description	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFB212507SH

Data Sheet

2 of 13

Rev. 03, 2015-10-30

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

0.1

µA

VDS = 63 V, VGS = 0 V

IDSS

—

1.0

µA

Gate Leakage Current

VGS = 12 V, VDS = 0 V

IGSS

—

1

µA

On-State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.05

—

Ω

Operating Gate Voltage

VDS = 28 V, IDQ = 1.6 A

VGS

—

2.85

—

V

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–6 to +10

V

Junction Temperature

TJ

200

°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C, 30 V VDD, 200 W CW)

R

θJC

0.26

°C/W

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PTFB212507SH V2 R2

PTFB212507SHV2R2XTMA1

H-37288G-4/2, ceramic open-cavity,

Tape & Reel, 250 pcs

formed leads

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PTFB212507SH Datasheet(PDF) 2 Page - Infineon Technologies AG

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