PTFC210202FCV1R250XTMA1 datasheet(3/9 Pages) INFINEON

Part #	PTFC210202FCV1R250XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 9 page

PTFC210202FC

Data Sheet

3 of 9

Rev. 03.4, 2016-06-22

Typical Performance (data taken in a production test fixture)

10

20

30

40

50

60

-60

-50

-40

-30

-20

-10

28

32

36

40

44

Average Output Power (dBm)

Single-carrier WCDMA 3GPP Drive-up

VDD = 28 V, IDQ = 170 mA,

3GPP WCDMA signal,

PAR = 7.5 dB, BW = 3.84 MHz

2110 ACPL

2140 ACPL

2170 ACPL

2110 ACPU

2140 ACPU

2170 ACPU

2110 EFF

2140 EFF

2170 EFF

ptfc210202fc_g3

10

20

30

40

50

60

-60

-50

-40

-30

-20

-10

28

32

36

40

44

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz,

3GPP WCDMA signal, PAR = 7.5 dB,

BW = 3.84 MHz

Efficiency

ACP Up

ACP Low

ptfc210202fc_g2

-25

-20

-15

-10

-5

-45

-40

-35

-30

-25

1950 2000 2050 2100 2150 2200 2250 2300

Frequency (MHz)

Single-carrier WCDMA Broadband

Performance

VDD = 28 V, IDQ = 170 mA, POUT = 36dBm,

3GPP WCDMA signal, PAR = 7.5 dB

Return Loss

ACP Up

ptfc210202fc_g5

15

20

25

30

35

40

18

19

20

21

22

23

1950 2000 2050 2100 2150 2200 2250 2300

Frequency (MHz)

Single-carrier WCDMA Broadband

Performance

VDD = 28 V, IDQ = 170 mA, POUT = 36dBm,

3GPP WCDMA signal, PAR = 7.5 dB

Efficiency

Gain

ptfc210202fc_g4

Similar Part No. - PTFC210202FCV1R250XTMA1

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFC210202FC	431Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 03.2, 2014-05-14
Cree, Inc	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTFC210202FC	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
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Similar Description - PTFC210202FCV1R250XTMA1

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTFC210202FC-V1	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
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Infineon Technologies A...	PXAC201202FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
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Infineon Technologies A...	PXAC213308FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04
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PTFC210202FCV1R250XTMA1 Datasheet(PDF) 3 Page - Infineon Technologies AG

PTFC210202FCV1R250XTMA1 Datasheet(HTML) 3 Page - Infineon Technologies AG

Similar Part No. - PTFC210202FCV1R250XTMA1

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