PTRA093302FCV1R0XTMA1 datasheet(1/8 Pages) INFINEON

Part #	PTRA093302FCV1R0XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 8

Rev. 03, 2016-03-16

PTRA093302FC

Confidential, Limited Internal Distribution

PTRA093302FC

Package H-37248-4

Thermally-Enhanced High Power RF LDMOS FET

330 W, 50 V, 746 – 768 MHz

Features

•

Input matched

•

Asymmetric Doherty design

- Main: P1dB = 150 W Typ

- Peak: P1dB = 175 W Typ

•

Typical Pulsed CW performance, 746–768 MHz,

48 V, combined outputs

- Output power at P1dB = 200 W

- Efﬁciency = 54%

- Gain = 16.5 dB

•

Capable of handling 10:1 VSWR @48 V, 79 W (CW)

output power

•

Integrated ESD protection

•

Human Body Model Class 1C (per ANSI/ESDA/

JEDEC JS-001)

•

Low thermal resistance

•

Pb-free and RoHS-compliant

Description

The PTRA093302FC is a 330-watt LDMOS FET with an asym-

metric design intended for use in multi-standard cellular power

ampliﬁer applications in the 746 MHz to 768 MHz frequency band.

Features include dual-path design, input matching, high gain and

thermally-enhanced package with earless ﬂange. Manufactured

with Inﬁneon's advanced LDMOS process, this device provides

excellent thermal performance and superior reliability.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Infineon Doherty production test fixture)

VDD = 48 V, IDQ = 400 mA, POUT = 79 W avg, VGS(peak) = (VGS @IDQ = 400 mA) – 3.0 V, ƒ = 768 MHz. 3GPP WCDMA signal:

peak/average = 10 dB @ 0.01% CCDF, channel bandwidth = 3.84 MHz.

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

16.0

17.25

—

dB

Drain Efﬁciency



D

47.0

51.6

—

%

Adjacent Channel Power Ratio

ACPR

—

–32.5

–30.0

dBc

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

V

DD = 48 V, IDQ = 400 mA, ƒ = 768 MHz,

3GPP WCDMA signal,

PAR = 10 dB, 3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

ptra093302dc_g1

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PTRA093302FCV1R0XTMA1 Datasheet(PDF) 1 Page - Infineon Technologies AG

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