PTVA101K02EVV1R0XTMA1 datasheet(1/9 Pages) INFINEON

Part #	PTVA101K02EVV1R0XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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Data Sheet

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Rev. 02.1, 2016-04-19

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PTVA101K02EV

Thermally-Enhanced High Power RF LDMOS FET

1000 W, 50 V, 1030 / 1090 MHz

Description

The PTVA101K02EV LDMOS FET is designed for use in power

amplifier applications in the 1030 MHz / 1090 MHz frequency band.

Features include high gain and thermally-enhanced package with

bolt-down flange. Manufactured with Infineon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

PTVA101K02EV

Package H-36275-4

Features

• Broadband input matching

• High gain and efficiency

• Integrated ESD protection

• Human Body Model Class 2 (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

• Capable of withstanding a 10:1 load mismatch

(all phase angles) at 1000 W under MODE–S

pulse condition, (32µS ON / 18µS OFF) X 80,

LTDF = 6.4%.

RF Characteristics

Pulsed RF Performance (tested in Infineon test fixture)

VDD = 50 V, IDQ = 0.15 A, POUT = 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

17

18

21

dB

Drain Efficiency

hD

62

65

—

%

0

10

20

30

40

50

60

2

6

10

14

18

22

26

30

35

40

45

50

55

60

65

Pout (dBm)

Power Sweep, Pulsed RF

VDD = 50 V, IDQ = 150 mA, TCASE = 25°C

ƒ = 1030 MHz

128µs, 10%

128µs, 1%

MODE-S

a101k02ev_1-1

Gain

Efficiency

Similar Part No. - PTVA101K02EVV1R0XTMA1

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Cree, Inc	PTVA101K02EV	359Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET1000 W, 50 V, 1030 / 1090 MHz
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Similar Description - PTVA101K02EVV1R0XTMA1

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	PTVA101K02EV	511Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 04, 2023-07-07
Cree, Inc	PTVA101K02EV	359Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET1000 W, 50 V, 1030 / 1090 MHz
STMicroelectronics	RF5L10111K0CB4	1Mb / 12P	1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor September 2021 Rev 2
Cree, Inc	PTVA120501EA	683Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
Infineon Technologies A...	PTVA120501EA	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz Rev. 02.1, 2016-05-26
WOLFSPEED, INC.	PTVA120501EA	695Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Rev. 04, 2023-07-10
Cree, Inc	PTVA102001EA	451Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz
Infineon Technologies A...	PTVA120121M	414Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz Rev. 02.1, 2017-02-03
WOLFSPEED, INC.	PTVA102001EA	540Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz Rev. 05, 2023-07-10
Cree, Inc	PTVA030121EA	423Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz

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PTVA101K02EVV1R0XTMA1 Datasheet(PDF) 1 Page - Infineon Technologies AG

PTVA101K02EVV1R0XTMA1 Datasheet(HTML) 1 Page - Infineon Technologies AG

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