PTFC270101M datasheet(2/22 Pages) INFINEON

Part #	PTFC270101M

Description	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFC270101M

Data Sheet

2 of 22

Rev. 04.1, 2016-07-26

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1

µA

VDS = 63 V, VGS = 0 V

IDSS

—

10

µA

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1

—

µA

On-State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

1

—



Operating Gate Voltage

VDS = 28 V, IDQ = 120 mA

VGS

2.2

2.7

3.2

V

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–6 to +10

V

Operating Voltage

VDD

0 to +32

V

Junction Temperature

TJ

225

°C

Storage Temperature Range

TSTG

–65 to +150

°C

Thermal Resistance (TCASE = 70°C, 12 W CW)

R

JC

4.04

°C/W

Moisture Sensitivity Level

Level

Test Standard

Package Temperature

Unit

3

IPC/JEDEC J-STD-020

260

°C

ESD Ratings

Test Type

Rated Class

Standard

Human Body Model (HBM)

1A

ANSI/ESDA/JEDEC JS-001

Charge Device Model (CDM)



JESD 22-C101

Ordering Information

Type

Order Code

Package and Description

Shipping

PTFC270101M V1 R1K

PTFC270101MV1R1KXUMA1

PG-SON-10, molded plastic, SMD

Tape & Reel, 1000 pcs

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PTFC270101M Datasheet(PDF) 2 Page - Infineon Technologies AG

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