PTVA042502FCV1R0 datasheet(4/10 Pages) INFINEON

Part #	PTVA042502FCV1R0

Description	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTVA042502EC

PTVA042502FC

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

4 of 10

Rev. 03.1, 2016-04-19

Load Pull Performance

Pulsed CW signal: 16 µs, 10% duty cycle, 50 V, 100 mA

P1dB

Max Output Power

Max PAE

Freq

[MHz]

Zs

[

W]

Zl

[W]

Gain

[dB]

POUT

[dBm]

POUT

[W]

PAE

[%]

Zl

[W]

Gain

[dB]

POUT

[dBm]

POUT

[W]

PAE

[%]

500

0.9 – j1.4

2.9 + j0.8

22.4

54.05

254

71.2

2.5 + j4.5

24.6

50.59

115

79.5

600

0.7 – j2.0

2.2 + j0.8

21.1

52.15

164

61.8

2.2 + j3.6

23.4

49.27

85

76.3

700

1.4 – j2.8

2.1 + j0.8

20.5

52.64

184

59.6

1.9 + j3.4

22.9

49.97

99

75.3

859

3.7 – j4.9

2.0 + j0.2

19.1

52.38

173

62.2

1.8 + j1.9

21.2

50.44

111

74.1

Pulsed CW signal: 16 µs, 10% duty cycle, 50 V, 100 mA

P3dB

Max Output Power

Max PAE

Freq

[MHz]

Zs

[

W]

Zl

[W]

Gain

[dB]

POUT

[dBm]

POUT

[W]

PAE

[%]

Zl

[W]

Gain

[dB]

POUT

[dBm]

POUT

[W]

PAE

[%]

500

0.9 – j1.4

2.9 + j0.6

20.3

54.58

287

74.1

2.6 + j4.1

22.4

51.49

141

80.0

600

0.7 – j2.0

2.3 + j0.7

19.0

52.77

189

62.2

2.3 + j3.2

21.1

50.39

109

76.9

700

1.4 – j2.8

2.2 + j0.7

18.4

53.34

216

60.2

1.8 + j3.2

20.7

50.60

115

75.8

859

3.7 – j4.5

2.0 + j0.1

17.0

53.11

205

63.9

1.8 + j1.8

19.1

51.08

128

73.6

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