PTVA120251EAV2R250 datasheet(2/14 Pages) INFINEON

Part #	PTVA120251EAV2R250

Description	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 14 page

PTVA120251EA

Data Sheet

2 of 14

Rev. 04.2, 2016-04-19

RF Characteristics

Pulsed RF Performance (tested in Infineon test fixture)

VDD = 50 V, IDQ = 0.02 A, POUT = 25 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 M Hz, 300 µs pulse width, 10% duty cycle

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

17

18

—

dB

Drain Efficiency

hD

47

54

—

%

Return Loss

IRL

—

–13

–9

dB

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

105

—

V

Drain Leakage Current

VDS = 50 V, VGS = 0 V

IDSS

—

1.0

µA

VDS = 105 V, VGS = 0 V

IDSS

—

10.0

µA

On-State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

1.4

—

W

Operating Gate Voltage

VDS = 50 V, IDQ = 150 mA

VGS

3

3.35

4

V

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

105

V

Gate-Source Voltage

VGS

–6 to +12

V

Junction Temperature

TJ

200

°C

Storage Temperature Range

TSTG

–65 to +150

°C

Thermal Resistance (TCASE = 70°C, VDD = 50 V, 25 W CW)

RqJC

3.7

°C/W

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PTVA120251EA V2 R0

PTVA120251EAV2R0XTMA1

H-36265-2, bolt-down

Tape & Reel, 50 pcs

PTVA120251EA V2 R250

PTVA120251EAV2R250XTMA1

H-36265-2, bolt-down

Tape & Reel, 250 pcs

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Infineon Technologies A...	PTVA120501EA	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz Rev. 02.1, 2016-05-26
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PTVA120251EAV2R250 Datasheet(PDF) 2 Page - Infineon Technologies AG

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