PXAC201202FC datasheet(2/10 Pages) INFINEON

Part #	PXAC201202FC

Description	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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PXAC201202FC

Data Sheet

2 of 10

Rev. 05.1, 2016-06-22

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

VDS = 63 V, VGS = 0 V

IDSS

—

10.0

µA

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

On-state Resistance

(main)

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.3

—

W

(peak)

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.16

—

W

Operating Gate Voltage

(main)

VDS = 28 V, IDQ = 242 mA

VGS

2.5

2.69

2.8

V

(peak)

VDS = 28 V, IDQ = 0 A

VGS

0.5

0.7

1.6

V

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-source Voltage

VDSS

65

V

Gate-source Voltage

VGS

–6 to +10

V

Operating Voltage

VDD

0 to +32

V

Junction Temperature

TJ

225

°C

Storage Temperature Range

TSTG

–65 to +150

°C

Thermal Resistance (TCASE = 70°C, 100 W CW)

RqJC

0.7

°C/W

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PXAC201202FC V2 R0

PXAC201202FCV2R0XTMA1

H-37248-4, ceramic open-cavity, earless

Tape & Reel, 50 pcs

PXAC201202FC V2 R250

PXAC201202FCV2R250XTMA1

H-37248-4, ceramic open-cavity, earless

Tape & Reel, 250 pcs

RF Specifications, 2140 MHz

One-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon

Doherty test fixture)

VDD = 28 V, VGS(peak) = 1.2 V, IDQ = 240 mA, POUT = 16 W average, ƒ = 2140 MHz. 3GPP WCDMA signal: 3.84 MHz band-

width, 10 dB PAR @0.01% CCDF.

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

16.0

16.5

—

dB

Drain Efficiency

hD

39

42

—

%

Adjacent Channel Power Ratio

ACPR

—

–29

–27

dBc

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