PXAC261212FCV1R250XTMA1 datasheet(3/10 Pages) INFINEON

Part #	PXAC261212FCV1R250XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 10 page

Data Sheet

3 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Typical Performance (data taken in Infineon Doherty reference test fixture)

0

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60

11

12

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Output Power (dBm)

Two-carrier 3GPP WCDMA

VDD = 28 V, IDQ = 280 mA,

VGS = 2.62 V, ƒ = 2605 MHz

10 MHz carrier spacing, 8 dB PAR

3.84 MHz bandwidth

Gain

Efficiency

c261212fc-gr1b

0

20

40

60

-60

-40

-20

0

29

33

37

41

45

49

53

Output Power (dBm)

Two-carrier 3GPP WCDMA

VDD = 28 V, IDQ = 280 mA,

VGS = 2.62 V, ƒ = 2605 MHz

10 MHz carrier spacing, 8 dB PAR,

3.84 MHz bandwidth

IMD Low

IMD Up

ACPR

Efficiency

c261212fc-gr2b

0

10

20

30

40

50

60

11

12

13

14

15

16

17

29

33

37

41

45

49

53

Output Power (dBm)

Two-carrier 3GPP WCDMA

VDD = 28 V, IDQ = 280 mA,

VGS = 2.62 V, ƒ = 2575 MHz

10 MHz carrier spacing, 8 dB PAR

3.84 MHz bandwidth

Gain

Efficiency

c261212fc-gr1a

0

20

40

60

-60

-40

-20

0

29

33

37

41

45

49

53

Output Power (dBm)

Two-carrier 3GPP WCDMA

VDD = 28 V, IDQ = 280 mA,

VGS = 2.62 V, ƒ = 2635 MHz

10 MHz carrier spacing, 8 dB PAR,

3.84 MHz bandwidth

IMD Low

IMD Up

ACPR

Efficiency

c261212fc-gr2c

Similar Part No. - PXAC261212FCV1R250XTMA1

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PXAC261212FC	210Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.1, 2014-06-30
Cree, Inc	PXAC261212FC	557Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

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Similar Description - PXAC261212FCV1R250XTMA1

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PXAC261212FC	557Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Infineon Technologies A...	PTFC261402FC	231Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz Rev. 05, 2016-06-21
	PTFC260202FC	870Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz Rev. 03.3, 2016-06-21
	PTFC262157FH	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz Rev. 03.1, 2016-06-21
	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
	PXAC261002FC	162Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz Rev. 03.3, 2016-06-15
	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
Cree, Inc	PTFC262808FV	806Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
	PXAC261002FC	634Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
	PTFC261402FC	322Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz

More results

PXAC261212FCV1R250XTMA1 Datasheet(PDF) 3 Page - Infineon Technologies AG

PXAC261212FCV1R250XTMA1 Datasheet(HTML) 3 Page - Infineon Technologies AG

Similar Part No. - PXAC261212FCV1R250XTMA1

Similar Description - PXAC261212FCV1R250XTMA1

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