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SI4500BDY-T1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4500BDY-T1 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  Si4500BDY Vishay Siliconix www.vishay.com 2 Document Number: 72281 S-41428—Rev. B, 26-Jul-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS( h) VDS = VGS, ID = 250 mA N-Ch 0.6 1.5 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA P-Ch −0.6 −1.5 V Gate Body Leakage IGSS VDS = 0 V VGS = "12 V N-Ch "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V P-Ch "100 nA VDS = 20 V, VGS = 0 V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS = −16 V, VGS = 0 V P-Ch −1 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55_C N-Ch 5 mA VDS = −16 V, VGS = 0 V, TJ = 55_C P-Ch −5 On State Drain Currentb ID( ) VDS = 5 V, VGS = 4.5 V N-Ch 30 A On-State Drain Currentb ID(on) VDS = −5 V, VGS = −4.5 V P-Ch −20 A VGS = 4.5 V, ID = 9.1 A N-Ch 0.016 0.020 Drain Source On State Resistanceb rDS( ) VGS = −4.5 V, ID = −5.3 A P-Ch 0.048 0.060 W Drain-Source On-State Resistanceb rDS(on) VGS = 2.5 V, ID = 3.3 A N-Ch 0.024 0.030 W VGS = −2.5 V, ID = −1 A P-Ch 0.082 0.100 Forward Transconductanceb gf VDS = 15 V, ID = 9.1 A N-Ch 29 S Forward Transconductanceb gfs VDS = −15 V, ID = −5.3 A P-Ch 11 S Diode Forward Voltageb VSD IS = 2.1 A, VGS = 0 V N-Ch 0.8 1.2 V Diode Forward Voltageb VSD IS = −2.1 A, VGS = 0 V P-Ch −0.8 −1.2 V Dynamica Total Gate Charge Q N-Ch 11 17 Total Gate Charge Qg N-Channel P-Ch 6.0 9 Gate Source Charge Q N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.1 A N-Ch 2.5 nC Gate-Source Charge Qgs P-Channel V 10 V V 45 V I 53 A P-Ch 1.3 nC Gate Drain Charge Q d VDS = −10 V, VGS = −4.5 V, ID = −5.3 A N-Ch 3.2 Gate-Drain Charge Qgd P-Ch 1.6 Turn On Delay Time td( ) N-Ch 35 50 Turn-On Delay Time td(on) NCh l P-Ch 20 30 Rise Time t N-Channel VDD = 10 V, RL = 10 W N-Ch 50 80 Rise Time tr VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W P-Ch 35 60 Turn Off Delay Time td( ff) P-Channel V 10 V R 10 W N-Ch 31 50 ns Turn-Off Delay Time td(off) VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W P-Ch 55 85 ns Fall Time tf ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W N-Ch 15 30 Fall Time tf P-Ch 35 60 Source Drain Reverse Recovery Time t IF = 2.1 A, di/dt = 100 A/ms N-Ch 30 60 Source-Drain Reverse Recovery Time trr IF = −2.1 A, di/dt = 100 A/ms P-Ch 25 50 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. |
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