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SI2301DS-T1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI2301DS-T1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si2301DS Vishay Siliconix www.vishay.com 2 Document Number: 70627 S-31990—Rev. E, 13-Oct-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA -20 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA -0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V, TJ = 55_C -10 mA On State Drain Currenta ID( ) VDS v -5 V, VGS = -4.5 V -6 A On-State Drain Currenta ID(on) VDS v -5 V, VGS = -2.5 V -3 A Drain Source On Resistancea rDS( ) VGS = -4.5 V, ID = -2.8 A 0.105 0.130 W Drain-Source On-Resistancea rDS(on) VGS = -2.5 V, ID = -2.0 A 0.145 0.190 W Forward Transconductancea gfs VDS = -5 V, ID = -2.8 A 6.5 S Diode Forward Voltage VSD IS = -1.6 A, VGS = 0 V -0.80 -1.2 V Dynamicb Total Gate Charge Qg 5.8 10 Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V ID ^ -2.8 A 0.85 nC Gate-Drain Charge Qgd ID ^ -2.8 A 1.70 Input Capacitance Ciss 415 Output Capacitance Coss VDS = -6 V, VGS = 0, f = 1 MHz 223 pF Reverse Transfer Capacitance Crss 87 Switchingc Turn On Time td(on) 13.0 25 Turn-On Time tr VDD = -6 V, RL = 6 W ID ^ -10 A VGEN = -45 V 36.0 60 ns Turn-Off Time td(off) ID ^ -1.0 A, VGEN = -4.5 V RG = 6 W 42 70 ns Turn-Off Time tf 34 60 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. |
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