QL4016-3PL84M datasheet(11/18 Pages) ETC

Part #	QL4016-3PL84M

Description	16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM

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11

•

QL4016 QuickRAM Data Sheet Rev I

Power-up Sequencing

Figure 8: Power-up Requirements

The following requirements must be met when powering up the device (refer to Figure 8):

•

When ramping up the power supplies keep (VCCIO -VCC)MAX ≤ 500 mV. Deviation from

this recommendation can cause permanent damage to the device.

•

VCCIO must lead VCC when ramping the device.

•

The power supply must take greater than or equal to 400 µs to reach VCC. Ramping

to VCC/VCCIO earlier than 400 µs can cause the device to behave improperly.

An internal diode is present in-between VCC and VCCIO, as shown in Figure 9.

Figure 9: Internal Diode Between VCC and VCCIO

V

CCIO

V

CC

(V

CCIO -VCC)MAX

Time

400 us

V

CC

V CC

V CCIO

Internal Logic

Cells, RAM

blocks, etc

IO Cells

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