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2N6235 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6235 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2N6235 DESCRIPTION · High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min) · DC Current Gain- : hFE = 25-125@ IC= 1A · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC = 1A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed f for high-voltage medium power and switching reguators applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
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