2N6213 datasheet(1/2 Pages) ISC

Part #	2N6213

Description	isc Silicon PNP Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Silicon PNP Power Transistor

2N6213

DESCRIPTION

·

High Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -350V(Min)

·

Good Linearity of hFE

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for high-speed switching and linear amplifier

application for high-voltage operational amplifier, switching

regulators, converters, inverters,deflection stages and high

fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-400

V

VCEO

Collector-Emitter Voltage

-350

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-2

A

ICM

Collector Current-Peak

-5

A

IB

Collector Current-Continuous

-1

A

PC

Collector Power Dissipation

@ TC=25℃

35

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

5.0

℃

/W

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