IDD12SG60C datasheet(1/7 Pages) INFINEON

Part #	IDD12SG60C

Description	3rd Generation thinQ!TM SiC Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDD12SG60C

3

rd Generation thinQ!TM SiC Schottky Diode

Features

• Revolutionary semiconductor material - Silicon Carbide

• Switching behavior benchmark

• No reverse recovery / No forward recovery

• Temperature independent switching behavior

• High surge current capability

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target applications

thinQ! 3G Diode designed for fast switching applications like:

Maximum ratings

Parameter

Symbol Conditions

Unit

Continuous forward current

I F

T C<130 °C

12

A

I F,SM

T C=25 °C, t p=10 ms

59

T C=150 °C, t p=10 ms

51

Non-repetitive peak forward current

I F,max

T C=25 °C, t p=10 µs

430

∫i

2dt

T C=25 °C, t p=10 ms

17

A

2s

T C=150 °C, t p=10 ms

12

Repetitive peak reverse voltage

V RRM

T j=25 °C

600

V

Diode dv/dt ruggedness

dv/ dt

VR= 0….480 V

50

V/ns

Power dissipation

P tot

T C=25 °C

125

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

Soldering temperature, reflow

soldering (max)

T sold

reflow MSL1

260

• Breakdown voltage tested at 20mA

2)

• Optimized for high temperature operation

• Lowest Figure of Merit QC/IF

i

²t value

Value

Surge non-repetitive forward current,

sine halfwave

• SMPS e.g.; CCM PFC

• Motor Drives; Solar Applications; UPS

VDC

600

V

Q

C

19

nC

IF; TC< 130 °C

12

A

Product Summary

Type

Package

Marking

Pin 1

Pin 2

Pin 3

IDD12SG60C

PG-TO252-3

D12G60C

n.c.

A

C

Rev. 2.4

page 1

2012-12-12

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IDD12SG60C Datasheet(PDF) 1 Page - Infineon Technologies AG

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