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LP3936 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LP3936 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 20 page Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. V DD1,VDD2,VDD_IO, V(OUT, FB) -0.3V to 6.0V Voltage on Logic Pins -0.3V to V DD_IO + 0.3V, with 6.0V max Voltage on LED Output Pins -0.3V to V(FB) + 0.3V, with 6.0V max Voltage on All Other Pins -0.3V to V DD1,2 + 0.3V, with 6.0V max I (ROUT, GOUT, BOUT) 150 mA I(V REF)10 µA Continuous Power Dissipation (Note 3) Internally Limited Junction Temperature (T J-MAX) 125˚C Storage Temperature Range −65˚C to +150˚C Maximum Lead Temperature 260˚C (Reflow soldering, 3 times) (Note 4) ESD Rating (Note 5) Human Body Model: 2 kV Machine Model: 200V Operating Ratings (Notes 1, 2) V DD1,VDD2 3.0V to 6.0V V DD_IO 1.8V – V DD1,2 Recommended Load Current 0 mA to 250 mA Junction Temperature (T J) Range −40˚C to +125˚C Ambient Temperature (T A) Range (Note 6) −40˚C to +85˚C Thermal Properties Junction-to-Ambient Thermal Resistance ( θ JA), SLD32A Package (Note 7) 72˚C/W Electrical Characteristics (Notes 2, 8) Limits in standard typeface are for T J = 25˚C. Limits in boldface type apply over the operating ambient temperature range (−40˚C ≤ T A ≤ +85˚C). Unless otherwise noted, specifications apply to the Section Block Diagram with: V DD1 =VDD2 =VDD_IO = 3.6V, C VDD1,CVDD2,CVDDIO = 1 µF, CIN,COUT = 10 µF, CVDDA = 1 µF, CVREF = 0.1 µF, LBOOST = 10 µH (Note 9). Symbol Parameter Condition Min Typ Max Units V DD1,2 Supply Voltage 3.0 3.6 6.0 V I DD Standby Supply Current (V DD1 and VDD2 current) NSTBY = L (register) CS, SCL, DI, NRST = H V DD1,VDD2 = 3.6V 1 7 µA No-Load Supply Current (V DD1 and VDD2 current, boost off) NSTBY = H (reg.) EN_BOOST = L (reg.) SCL, CS, DI, NRST = H 170 300 µA Full Load Supply Current (V DD1 and VDD2 current, boost on) NSTBY = H (register) NRST, CS, SCL, DI = H RGB_EN = L WLED1…6=L EN_AMBADC = L 1mA I DD_IO V DD_IO Standby Supply Current NSTBY = L (register) CS, SCL, DI, NRST = H 1µA V DD_IO Operating Supply Current 1 MHz Clock Frequency C L =50pFatDOpin 20 µA V REF Reference Voltage (Note 10) I REF ≤ 1 nA, Test Purposes Only 1.205 −2 1.23 1.255 +2 V % V DDA LDO Output Voltage IV DDA < 1µA 2.688 –4 2.8 2.912 +4 %V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: All voltages are with respect to the potential at the GND pins (GND1, GND2, GND_T, GND_BOOST, GND_WLED, GND_RGB). Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 160˚C (typ.) and disengages at TJ = 140˚C (typ.). Note 4: For detailed soldering specifications and information, please refer to National Semiconductor Application Note 1125: Laminate CSP/FBGA Package (AN-1125). Note 5: The Human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. The machine model is a 200 pF capacitor discharged directly into each pin. MIL-STD-883 3015.7 www.national.com 4 |
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