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GL41Y Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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GL41Y Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page GL41Y GLASS PASSIVATED JUNCTION SILICON RECTIFIER PRV : 1600 Volts Io : 1.0 Ampere FEATURES : * Glass passivated junction chip * High current capability * High reliability * Low reverse current * Pb / RoHS Free MECHANICAL DATA : * Case : MELF Glass Case * Weight : 0.25 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UNIT Maximum Repetitive Peak Reverse Voltage VRRM V Maximum RMS Voltage VRMS V Maximum DC Blocking Voltage VDC V Maximum Average Forward Current IF(AV) A Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Amp. VF V Maximum DC Reverse Current Ta = 25 °C IR 10 μA at rated DC Blocking Voltage Ta = 125 °C IR(H) 50 μA Maximum Junction Capacitance (Note1) CJ pF Maximum Thermal Resistance (Note2) RθJA 75 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.24 × 0.24"(6.0 × 6.0 mm) copper pads to each terminal. Page 1 of 2 Rev. 00 : April 24, 2009 1600 1.2 A 8.0 RATING 1.0 IFSM 30 VALUE 1600 1120 Dimensions in inches and ( millimeters ) MELF 0.205(5.2) 0.189(4.8) φ 0.102 (2.6) 0.094 (2.4) 0.022(0.55) Cathode Mark Mounting Pad Layout 0.256 (6.50) REF 0.049 (1.25)Min. 0.157 (4.00) Max. 0.118 (3.00)Min. IATF 0060636 SGS TH07/1033 TH09/2479 TH97/2478 |
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