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BZB784-C9V1 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BZB784-C9V1 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 Feb 27 2 Philips Semiconductors Product specification Voltage regulator double diodes BZB784 series FEATURES • Total power dissipation: max. 350 mW • Approx. 5% VZ tolerance • Working voltage range: nom. 2.4 to 15 V (E24 range). APPLICATIONS • General regulation functions • ESD and surge protection. DESCRIPTION Low-power voltage regulator diodes in a small SOT323 (SC-70) package. PINNING SOT323 (SC-70) PIN DESCRIPTION 1 cathode 2 cathode 3 common anode handbook, halfpage Top view 2 1 3 MAM407 2 1 3 Fig.1 Simplified outline and symbol. MARKING LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE BZB784-C2V4 91 BZB784-C3V9 96 BZB784-C6V2 9B BZB784-C10 9G BZB784-C2V7 92 BZB784-C4V3 97 BZB784-C6V8 9C BZB784-C11 9H BZB784-C3V0 93 BZB784-C4V7 98 BZB784-C7V5 9D BZB784-C12 9J BZB784-C3V3 94 BZB784-C5V1 99 BZB784-C8V2 9E BZB784-C13 9K BZB784-C3V6 95 BZB784-C5V6 9A BZB784-C9V1 9F BZB784-C15 9L SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 200 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tamb =25 °C; prior to surge see Table 1 Ptot total power dissipation; note 1 Tamb =25 °C; 2 diodes loaded − 350 mW Tamb =25 °C; 1 diode loaded − 180 mW PZSM non-repetitive peak reverse dissipation tp = 100 µs; square wave; Tamb =25 °C; prior to surge − 40 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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