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BF1211WR Datasheet(PDF) 7 Page - NXP Semiconductors |
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BF1211WR Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 15 page  2003 Dec 16 7 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR handbook, halfpage 050 20 0 4 8 12 16 10 20 30 40 MDB833 ID (mA) IG1(µA) Fig.9 Drain current as a function of gate 1 current; typical values. VDS = 5 V; VG2-S =4V. Tj =25 °C. handbook, halfpage 01 5 16 12 4 0 8 23 4 MDB834 ID (mA) VGG (V) Fig.10 Drain current as a function of gate 1 supply voltage (VGG); typical values. VDS = 5 V; VG2-S = 4 V; Tj =25 °C. RG1 =75kΩ (connected to VGG); see Fig.21. handbook, halfpage 024 6 20 0 16 12 8 4 MDB835 ID (mA) VGG = VDS (V) (7) (6) (5) (4) (3) (2) (1) Fig.11 Drain current as a function of gate 1 (VGG) and drain supply voltage; typical values. VG2-S = 4 V; Tj =25 °C; RG1 connected to VGG; see Fig.21. (1) RG1 =47kΩ. (2) RG1 =56kΩ. (3) RG1 =68kΩ. (4) RG1 =75kΩ. (5) RG1 =82kΩ. (6) RG1 = 100 kΩ. (7) RG1 = 120 kΩ. handbook, halfpage 024 6 20 0 16 12 8 4 MDB836 ID (mA) VG2-S (V) (2) (1) (3) (4) (5) Fig.12 Drain current as a function of gate 2 voltage; typical values. (1) VGG =5V. (2) VGG = 4.5 V. (3) VGG =4V. (4) VGG = 3.5 V. (5) VGG =3V. VDS = 5 V; Tj =25 °C; RG1 =75kΩ (connected to VGG); see Fig.21. |
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