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ILD1150 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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ILD1150 Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 34 page Datasheet 8 Rev. 1.1, 2012-04-11 ILD1150 General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings1) T j = -40 ⋅C to +125 ⋅C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Voltages 4.1.1 IN Supply Input V IN -0.3 45 V 4.1.2 EN / PWMI Enable or PWM Input V EN -40 45 V 4.1.3 FBH-FBL; Feedback Error Amplifier Differential V FBH-VFBL -5.5 5.5 V 4.1.4 FBH; Feedback Error Amplifier Positive Input V FBH -0.3 45 V 4.1.5 FBL Feedback Error Amplifier Negative Input V FBL -0.3 45 V 4.1.6 OVFB Over Voltage Feedback Input V OVP -0.3 5.5 V 4.1.7 -0.3 6.2 V t < 10s 4.1.8 SWCS Switch Current Sense Input V SWCS -0.3 5.5 V 4.1.9 -0.3 6.2 V t < 10s 4.1.10 SWO Switch Gate Drive Output V SWO -0.3 5.5 V 4.1.11 -0.3 6.2 V t < 10s 4.1.12 SGND Current Sense Switch GND V SGND -0.3 0.3 V 4.1.13 COMP Compensation Input V COMP -0.3 5.5 V 4.1.14 -0.3 6.2 V t < 10s 4.1.15 FREQ / SYNC; Frequency and Synchronization Input V FREQ / SYNC -0.3 5.5 V 4.1.16 -0.3 6.2 V t < 10s 4.1.17 PWMO PWM Dimming Output V PWMO -0.3 5.5 V 4.1.18 -0.3 6.2 V t < 10s 4.1.19 ST V ST -0.3 45 V 4.1.20 Diagnostic Status Output I ST -5 5 mA 4.1.21 IVCC Internal Linear Voltage Regulator Output V IVCC -0.3 5.5 V 4.1.22 -0.3 6.2 V t < 10s Temperatures 4.1.23 Junction Temperature T j -40 150 °C– 4.1.24 Storage Temperature T stg -55 150 °C– ESD Susceptibility 4.1.25 ESD Resistivity to GND V ESD,HBM -2 2 kV HBM2) |
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