TO-220-3L Plastic-Encapsulate MOSFETS

CJP08N60

N-Channel Power MOSFET

GENERAL DESCRIPTION

This advanced high voltage MOSFET is designed to stand

high energy in the avalanche mode and switch efficiently. This new

high energy device also offers a drain-to-source diode fast

recovery time. Desighed for high voltage, high speed switching

applications such as power supplies, converters, power motor

controls and bridge circuits.

FEATURE

High Current Rating

Lower Capacitance

Lower Total Gate Charge

Avalanche Energy Specified

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

600

Gate-Source Voltage

±30

V

Continuous Drain Current

8

Pulsed Drain Current

32

A

Single Pulsed Avalanche Energy (note1)

250

mJ

Power Dissipation

2

W

Thermal Resistance from Junction to Ambient

62.5

℃/W

Operating and Storage Temperature Range

-55 ~+150

Maximum lead temperure for soldering purposes ,

Duration 5 seconds

260

℃

TO-220-3L

1. GATE

2. DRAIN

3. SOURCE

1 of 2

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CJP08N60