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4N50-220 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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4N50-220 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 4N50 · ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 4A ;VGS= 0 1.3 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2A 2.0 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 250 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 800 pF Crss Reverse Transfer capacitance 60 Coss Output Capacitance 200 tr Rise Time VGS=10V; ID=2.5A; VDD=225V; RL=15Ω 30 ns td(on) Turn-on Delay Time 30 tf Fall Time 30 td(off) Turn-off Delay Time 55 · |
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