TO-251S Plastic-Encapsulate MOSFETS

CJD02N60

N-Channel Power MOSFET

General Description

The high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability without

degrading performance over time. In addition , this advanced

MOSFET is designed to withstand high energy in avalanche and

commutation modes . The new energy efficient design also offers a

drain-to-source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power suppliers,

converters and PWM motor controls , these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional and safety margin

against unexpected voltage transients.

FEATURE

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

600

Gate-Source Voltage

±20

V

Continuous Drain Current

2

Pulsed Drain Current

8

A

Single Pulsed Avalanche Energy*

128

mJ

Power Dissipation

1.25

W

Thermal Resistance from Junction to Ambient

100

℃/W

Junction Temperature

150

Storage Temperature

-50 ~+150

℃

TO-251S

1. GATE

2. DRAIN

3. SOURCE

1 of 3

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CJD02N60