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SN65HVS883 Datasheet(PDF) 4 Page - Texas Instruments |
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SN65HVS883 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 28 page 4 SN65HVS883 SLASEE6 – SEPTEMBER 2016 www.ti.com Product Folder Links: SN65HVS883 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT V24 Field power input V24 –0.3 36 V VIPx Field digital inputs IPx –0.3 36 V VID Voltage at any logic input DB0, DB1, CLK, SIP, CE, LD –0.5 6 V IO Output current CHOK, SOP ±8 mA PTOT Continuous total power dissipation See Thermal Information table TJ Junction temperature 170 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. (3) JEDEC Standard 22, Method A115-A. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS- 001(1) All pins ±4000 V IPx,V24 ±15000 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) All pins ±1000 Machine Mode(3) All pins ±100 (1) Field input voltages correspond to an input resistor of RIN = 1.2 kΩ (2) Maximum data rate corresponds to 0 ms debounce time, (DB0 = open, DB1 = FGND), and RIN = 0 Ω 6.3 Recommended Operating Conditions MIN TYP MAX UNIT V24 Field supply voltage 10 24 34 V VIPL Field input low-state input voltage(1) 0 4 V VIPH Field input high-state input voltage(1) 10 34 V VIL Logic low-state input voltage 0 0.8 V VIH Logic high-state input voltage 2 5.5 V RLIM Current limiter resistor 17 25 500 k Ω fIP Input data rate(2) 0 1 Mbps TJ 150 °C TA –40 85 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) SN65HVS883 UNIT PWP (HTSSOP) 28 PINS RθJA Junction-to-ambient thermal resistance 35 °C/W RθJC(top) Junction-to-case (top) thermal resistance 4.27 °C/W RθJB Junction-to-board thermal resistance 15 °C/W PD Device power dissipation ILOAD = 50 mA, RIN = 0, IPO–IP7 = V24 = 30 V, RE7 = FGND, fCLK = 100 MHz, IIP-LIM and ICC = worst case with RLIM = 25 kΩ 2591 mW |
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