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IS66WVE1M16EBLL-55BLI Datasheet(PDF) 11 Page - Integrated Silicon Solution, Inc |
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IS66WVE1M16EBLL-55BLI Datasheet(HTML) 11 Page - Integrated Silicon Solution, Inc |
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11 / 34 page  11 IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL Rev. C | Oct. 2015 www.issi.com - SRAM@issi.com Low-Power Feature Standby Mode Operation During standby, the device current consumption is reduced to the level necessary to perform the DRAM refresh operation. Standby operation occurs when CE# and ZZ# are HIGH. The device will enter a reduced power state upon completion of a READ or WRITE operations when the address and control inputs remain static for an extended period of time. This mode will continue until a change occurs to the address or control inputs. Temperature Compensated Refresh Temperature compensated refresh (TCR) is used to adjust the refresh rate depending on the device operating temperature. DRAM technology requires more frequent refresh operations to maintain data integrity as temperatures increase. More frequent refresh is required due to the increased leakage of the DRAM's capacitive storage elements as temperatures rise. A decreased refresh rate at lower temperatures will result in a savings in standby current. TCR allows for adequate refresh at four different temperature thresholds: +15°C, +45°C, +70°C, and +85°C. The setting selected must be for a temperature higher than the case temperature of the device. If the case temperature is +50°C, the system can minimize self refresh current consumption by selecting the +70°C setting. The +15°C and +45°C settings would result in inadequate refreshing and cause data corruption. |
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