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IS42SM16200D-75BLI Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc |
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IS42SM16200D-75BLI Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc |
10 / 34 page 10 Rev. A | November 2015 IS42/45SM/RM/VM16200D www.issi.com - dram@issi.com CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks. If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge n + m. The DQs will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data will be valid by clock edge n + m. For example, assuming that the clock cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency is programmed to two clocks, the DQs will start driving after T1 and the data will be valid by T2, as shown in Figure 6. Reserved states should not be used as unknown operation or incompatibility with future versions may result. Operating Mode The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. Test modes and reserved states should not be used because unknown operation or incompatibility with future versions may result. Write Burst Mode When M9 = 0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts; when M9 = 1, the programmed burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses. CLK COMMAND DQ NOP NOP Dout T0 T1 T2 tLZ tOH tAC CAS Latency=2 T3 READ CLK COMMAND DQ NOP NOP Dout T0 T1 T2 tLZ tOH tAC CAS Latency=3 T3 NOP T4 READ DON’T CARE UNDEFINED Figure6: CAS Latency |
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