 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
E521.41 Datasheet(PDF) 10 Page - ELMOS Semiconductor AG |
|
||||||||||||||||||||||||||||||
E521.41 Datasheet(HTML) 10 Page - ELMOS Semiconductor AG |
|
|
10 / 89 page  4 Channel Multi-Mode PSI5 Transceiver E521.41 PRODUCTION DATA – Apr 27, 2016 4 Operating Conditions Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress ratings only; operation of the device at these or any other conditions beyond those listed in the opera- tional sections of this document is not implied. Exposure to absolute maximum rated conditions for extended peri- ods may affect device reliability. All voltages referred to V(GND). Currents flowing into terminals are positive, those drawn out of a terminal are negative. 4.1 Absolute Maximum Ratings Table 4.1-1: ESD requirements No. Description Condition Symbol Min Max Unit 1 ESD according Human Body Model (HBM), Q100-002 Ω for pins SIFx; VSUPPLY; (100pF/1.5k ) ESD pins SIFX,VSUPPL Y ±4000 V 2 ESD according Human Body Model (HBM), Q100-002 Ω for all other pins; (100pF/1,5k ) ESD all other pins ±2000 V 3 ESD according Charged Device Model (CDM), Q100-011 Corner pins ESD corner pins CDM ±750 V 4 ESD according Charged Device Model (CDM), Q100-011 Non-corner pins ESD non corner pins CDM ±450 V 5 Input voltage range (supply from ECU) VSUPPPLY -0.3 40 V 6 VBUS voltage range VBUS -0.3 40 V 7 NMOS gate voltage at pin VG VG -0.3 40 V 8 Voltage of charge pump fly cap. - negative pin VCP1 -0.3 40 V 9 Voltage of charge pump fly cap. - positive pin VCP2 -0.3 40 V 10 Voltage of charge pump storage capacitor or CSYNC voltage supply (from ECU) VSYNC -0.3 40 V 11 Voltage at sensor interface X=1-4 VSIF_X -0.3 40 V 12 Supply voltage for analog blocks and digital I/O pins VDD -0.3 19 V 13 Voltage of digital input pins VIN_DIG -0.3 19 V 14 Voltage of the digital outputs pins VOUT_DIG -0.3 19 V 15 Voltage of NRES and testmode pin VNRES -0.3 19 V 16 Junction temperature TJ -40 150 oC 17 Storage temperature TSTG -40 125 oC 18 Ambient operating temperature range TAMB -40 125 oC 19 Thermal Resistance (junction-ambient) (refer to application notes of QFN-packages, thermal con- nection of exposed die pad very important) RTJA 23 K/W Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0109E.06 10 / 89 |
Similar Part No. - E521.41 |
|
Similar Description - E521.41 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
