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MJB45H11 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJB45H11 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor MJB45H11 DESCRIPTION · Low Collector-Emitter saturation voltage · Pb-free package are available · Fast switching speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · General purpose amplification and switching such as out or driver stages in applications such as switching regulators,converters and power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICP Collector Current-Pulse -20 A PC Total Power Dissipation @ Ta=25℃ 2 W PC Total Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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