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NE5517DG Datasheet(PDF) 6 Page - ON Semiconductor

Part # NE5517DG
Description  Dual Operational Transconductance Amplifier
Download  15 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NE5517DG Datasheet(HTML) 6 Page - ON Semiconductor

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NE5517, NE5517A, AU5517
http://onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
0
-20
-40
-60
-80
-100
0.1mA1mA10mA
100mA
1000mA
IABC AMPLIFIER BIAS CURRENT (mA)
VS = ±15V
RL = 10kW
OUTPUT NOISE
20kHz BW
VIN = 40mVP-P
VIN = 80mVP-P
VS = ±15V
Tamb = +25°C
CIN
COUT
7
6
5
4
3
2
1
0
0.1mA1mA10mA
100mA
1000mA
AMPLIFIER BIAS CURRENT (IABC)
0.1mA1mA10mA
100mA
1000mA
2000
1800
1600
1400
1200
1000
800
600
400
200
0
AMPLIFIER BIAS CURRENT (IABC)
-55°C
+25°C
+125°C
100
10
1
0.1
0.01
1
10
100
1000
DIFFERENTIAL INPUT VOLTAGE (mVP-P)
600
500
400
300
200
100
0
10
100
1k
10k
100k
FREQUENCY (Hz)
IABC = 1mA
IABC = 100mA
Figure 12. Amplifier Bias Voltage vs.
Amplifier Bias Current
Figure 13. Input and Output
Capacitance
Figure 14. Distortion vs. Differential
Input Voltage
Figure 15. Voltage vs. Amplifier Bias Current
Figure 16. Noise vs. Frequency
IABC = 1mA
RL = 10kW
Figure 17. Leakage Current Test Circuit
Figure 18. Differential Input Current Test Circuit
Figure 19. Buffer VBE Test Circuit
4, 13
2, 15
3, 14
−
+
NE5517
11
6
1, 15
5, 12
7, 10
8, 9
A
+36V
4, 13
2, 15
3, 14
−
+
NE5517
11
6
1, 10
5, 12
A
+15V
−15V
4V
V
V+
50kW
V−


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