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SA5230 Datasheet(PDF) 8 Page - ON Semiconductor |
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SA5230 Datasheet(HTML) 8 Page - ON Semiconductor |
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8 / 18 page  NE5230, SA5230, SE5230 http://onsemi.com 8 THERMAL CONSIDERATIONS When using the NE5230, the internal power dissipation capabilities of each package should be considered. ON Semiconductor does not recommend operation at die temperatures above 110 °C in the SO package because of its inherently smaller package mass. Die temperatures of 150 °C can be tolerated in all the other packages. With this in mind, the following equation can be used to estimate the die temperature: Tj + Tamb ) (PD qJA) (eq. 1) Where Tamb= Ambient Temperature Tj = Die Temperature PD = Power Dissipation = (ICC x VCC) qJA = Package Thermal Resistance = 270 °C/W for SO−8 in PC Board Mounting See the packaging section for information regarding other methods of mounting. qJA − 100°C/W for the plastic DIP. The maximum supply voltage for the part is 15 V and the typical supply current is 1.1 mA (1.6 mA max). For operation at supply voltages other than the maximum, see the data sheet for ICC versus VCC curves. The supply current is somewhat proportional to temperature and varies no more than 100 mA between 25°C and either temperature extreme. Operation at higher junction temperatures than that recommended is possible but will result in lower Mean Time Between Failures (MTBF). This should be considered before operating beyond recommended die temperature because of the overall reliability degradation. DESIGN TECHNIQUES AND APPLICATIONS The NE5230 is a very user−friendly amplifier for an engineer to design into any type of system. The supply current adjust pin (Pin 5) can be left open or tied through a pot or fixed resistor to the most negative supply (i.e., ground for single supply or to the negative supply for split supplies). The minimum supply current is achieved by leaving this pin open. In this state it will also decrease the bandwidth and slew rate. When tied directly to the most negative supply, the device has full bandwidth, slew rate and ICC. The programming of the current−control pin depends on the trade−offs which can be made in the designer’s application. The graphs in Figures 3 and 4 will help by showing bandwidth versus ICC. As can be seen, the supply current can be varied anywhere over the range of 100 mA to 600 mA for a supply voltage of 1.8 V. An external resistor can be inserted between the current control pin and the most negative supply. The resistor can be selected between 1.0 W to 100 k W to provide any required supply current over the indicated range. In addition, a small varying voltage on the bias current control pin could be used for such exotic things as changing the gain−bandwidth for voltage controlled low pass filters or amplitude modulation. Furthermore, control over the slew rate and the rise time of the amplifier can be obtained in the same manner. This control over the slew rate also changes the settling time and overshoot in pulse response applications. The settling time to 0.1% changes from 5.0 ms at low bias to 2.0 ms at high bias. The supply current control can also be utilized for wave−shaping applications such as for pulse or triangular waveforms. The gain−bandwidth can be varied from between 250 kHz at low bias to 600 kHz at high bias current. The slew rate range is 0.08 V/ ms at low bias and 0.25 V/ms at high bias. Figure 3. Unity Gain Bandwidth vs. Power Supply Current for VCC = ±0.9 V Figure 4. ICC Current vs. Bias Current Adjusting Resistor for Several Supply Voltages 800 700 600 500 400 300 200 100 100 200 300 400 500 600700 UNITY GAIN BANDWIDTH (kHz) TA − 25°C VCC − 15V VCC − 12V VCC − 9V VCC − 6V VCC − 3V VCC − 2V VCC − 1.8V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 100 101 102 103 104 105 RADJ (W) |
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