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MBRF10150CL Datasheet(PDF) 1 Page - Mospec Semiconductor

Part # MBRF10150CL
Description  Full Plastic Dual Schottky Barrier Power Rectifiers
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Manufacturer  MOSPEC [Mospec Semiconductor]
Direct Link  http://www.mospec.com.tw
Logo MOSPEC - Mospec Semiconductor

MBRF10150CL Datasheet(HTML) 1 Page - Mospec Semiconductor

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MOSPEC
MBRF10150CL
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal.
The proprietary barrier technology allows for
reliable operation up to 175℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
175℃ Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Symbol
MBRF10150CL
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
RMS Reverse Voltage
VR(RMS)
105
V
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR), TC=125℃
IF(AV)
5
10
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
20
A
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
IFSM
150
A
Operating and Storage Junction Temperature Range
TJ , Tstg
-65 to +175
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
150 VOLTS
ITO-220AB
MILLIMETERS
DIM
MIN
MAX
A
15.05
15.15
B
13.35
13.45
C
10.00
10.10
D
6.55
6.65
E
2.65
2.75
F
1.55
1.65
G
1.15
1.25
H
0.55
0.65
I
2.50
2.60
J
3.00
3.20
K
1.10
1.20
L
0.55
0.65
M
4.40
4.60
N
1.15
1.25
O
3.35
3.45
P
2.65
2.75
Q
3.15
3.25
R
3.60
3.80
THERMAL RESISTANCES
Typical Thermal Resistance junction to case ( per device )
Rθj-c
3.4
/w
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ. Max.
Unit
Maximum Instantaneous Forward Voltage ( per diode )
( IF =0.1 Amp TC = 25℃)
---
0.29 0.35
( IF =2.5 Amp TC = 25℃)
---
0.78 0.85
( IF =5.0 Amp TC = 25℃)
VF
---
0.90 0.95
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
---
0.08
0.1
( Rated DC Voltage, TC = 125℃)
IR
---
15
30
mA


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