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K5A3240YBC-T855 Datasheet(PDF) 11 Page - Samsung semiconductor |
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K5A3240YBC-T855 Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 45 page MCP MEMORY K5A3x40YT(B)C Revision 0.0 November 2002 - 11 - Preliminary Flash DEVICE OPERATION Byte/Word Mode If the BYTEF ball is set at logical "1" , the device is in word mode, DQ0-DQ15 are active. Otherwise the BYTEF ball is set at logical "0" , the device is in byte mode, DQ0-DQ7 are active. DQ8-DQ14 are in the High-Z state and DQ15 ball is used as an input for the LSB (A-1) address ball. Read Mode Flash memory is controlled by Chip Enable (CEF), Output Enable (OE) and Write Enable (WE). When CEF and OE are low and WE is high, the data stored at the specified address location,will be the output of the device. The outputs are in high impedance state whenever CEF or OE is high. Standby Mode Flash memory features Stand-by Mode to reduce power consumption. This mode puts the device on hold when the device is dese- lected by making CEF high (CEF = VIH). Refer to the DC characteristics for more details on stand-by modes. Output Disable The device outputs are disabled when OE is High (OE = VIH). The output balls are in high impedance state. Automatic Sleep Mode Flash memory features Automatic Sleep Mode to minimize the device power consumption. Since the device typically draws 5 µA of current in Automatic Sleep Mode, this feature plays an extremely important role in battery-powered applications. When addresses remain steady for tAA+50ns, the device automatically activates the Automatic Sleep Mode. In the sleep mode, output data is latched and always available to the system. When addresses are changed, the device provides new data without wait time. Data Outputs tAA + 50ns Data Auto Sleep Mode Address Data Data Data Data Autoselect Mode Flash memory offers the Autoselect Mode to identify manufacturer and device type by reading a binary code. The Autoselect Mode allows programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. In addition, this mode allows the verification of the status of write protected blocks. The manufacturer and device code can be read via the command register. The Command Sequence is shown in Table 5 and Figure 3. The autoselect operation of block protect ver- ification is initiated by first writing two unlock cycle. The third cycle must contain the bank address and autoselect command (90H). If Block address while (A6, A1, A0) = (0,1,0) is finally asserted on the address ball, it will produce a logical "1" at the device output DQ0 to indicate a write protected block or a logical "0" at the device output DQ0 to indicate a write unprotected block. To terminate the autoselect operation, write Reset command (F0H) into the command register. Figure 2. Auto Sleep Mode Operation |
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