K7A401800B

128Kx36/x32 & 256Kx18 Synchronous SRAM

- 1 -

Rev 1.0

Nov 2001

K7A403200B

K7A403600B

Document Title

128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Remark

Preliminary

Preliminary

Preliminary

Preliminary

Final

History

1. Initial draft

1. Changed DC parameters

Icc ; from 350mA to 290mA at -16,

from 330mA to 270mA at -15,

from 300mA to 250mA at -14,

1. Delete Pass-Through

1. Add x32 org. and industrial temperature

1. Final spec release

2. Changed Pin Capacitance

- Cin ; from 5pF to 4pF

- Cout ; from 7pF to 6pF

Draft Date

May. 15. 2001

June. 12. 2001

June.25. 2001

Aug. 11. 2001

Nov. 15. 2001

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev. No

0.0

0.1

0.2

0.3

1.0