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K7B401825B-QC Datasheet(PDF) 8 Page - Samsung semiconductor |
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K7B401825B-QC Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 18 page K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM - 8 - Rev 1.0 Nov 2001 K7A403200B K7A403600B ABSOLUTE MAXIMUM RATINGS* *Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. PARAMETER SYMBOL RATING UNIT Voltage on VDD Supply Relative to VSS Voltage on VDDQ Supply Relative to VSS VDD -0.3 to 4.6 V VDDQ VDD V Voltage on Input Pin Relative to VSS VIN -0.3 to VDD+0.3 V Voltage on I/O Pin Relative to VSS VIO -0.3 to VDDQ+0.3 V Power Dissipation PD 2.2 W Storage Temperature TSTG -65 to 150 °C Operating Temperature Commercial TOPR 0 to 70 °C Industrial TOPR -40 to 85 °C Storage Temperature Range Under Bias TBIAS -10 to 85 °C CAPACITANCE*(TA=25 °C, f=1MHz) *Note : Sampled not 100% tested. PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT Input Capacitance CIN VIN=0V - 4 pF Output Capacitance COUT VOUT=0V - 6 pF OPERATING CONDITIONS at 3.3V I/O (0 °C≤ TA≤70°C) * The above parameters are also guaranteed at industrial temperature range. PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD 3.135 3.3 3.6 V VDDQ 3.135 3.3 3.6 V Ground VSS 0 0 0 V OPERATING CONDITIONS at 2.5V I/O(0 °C ≤ TA ≤ 70°C) * The above parameters are also guaranteed at industrial temperature range. PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD 3.135 3.3 3.6 V VDDQ 2.375 2.5 2.9 V Ground VSS 0 0 0 V |
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Similar Description - K7B401825B-QC |
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