K6X8008T2B Family

Revision 1.0

September 2003

2

CMOS SRAM

1Mx8 bit Low Power and Low Voltage full CMOS Static RAM

GENERAL DESCRIPTION

The K6X8008T2B families are fabricated by SAMSUNG

′s

advanced full CMOS process technology. The families sup-

port various operating temperature range for user flexibility of

system design. The families also support low data retention

voltage for battery back-up operation with low data retention

current.

FEATURES

• Process Technology: Full CMOS

• Organization: 1M x8

• Power Supply Voltage: 2.7~3.6V

• Low Data Retention Voltage: 1.5V(Min)

• Three state outputs

• Package Type: 44-TSOP2-400F

Name

Function

Name

Function

Chip Select Inputs

Vcc

Power

OE

Output Enable Input

Vss

Ground

WE

Write Enable Input

Address Inputs

Data Inputs/Outputs

NC

No Connect

1. This parameter is measured with 50pF test load (Vcc=3.0~3.6V).

Product Family

Operating Temperature

Vcc Range

Speed

Power Dissipation

PKG Type

Standby

Operating

K6X8008T2B-F

Industrial(-40~85

°C)

2.7~3.6V

15

µA

30mA

44-TSOP2-400F

K6X8008T2B-Q

Automotive(-40~125

°C)

70ns

25

µA

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

FUNCTIONAL BLOCK DIAGRAM

Clk gen.

Row

select

Data

cont

Data

cont

Vcc

Vss

Precharge circuit.

Memory array

1024 rows

1024

×8 columns

I/O Circuit

Column select

PIN DESCRIPTION

WE

OE

CS1

Control Logic

CS2

Row

Addresses

Column Addresses

A4

A3

A2

A1

A0

CS1

NC

NC

I/O1

I/O2

Vcc

Vss

I/O3

I/O4

NC

NC

WE

A19

A18

A17

A16

A5

A6

A7

OE

CS2

A8

NC

NC

I/O8

I/O7

Vss

Vcc

I/O6

I/O5

NC

NC

A9

A10

A11

A12

44-TSOP2

Forward

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

A15

A14

A13