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KAF-0261-AAA-CD-AE Datasheet(PDF) 1 Page - ON Semiconductor |
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KAF-0261-AAA-CD-AE Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 14 page © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 3 1 Publication Order Number: KAF−0261/D KAF-0261 512 (H) x 512 (V) Full Frame CCD Image Sensor Description The KAF−0261 Image Sensor is a high performance, charge coupled device (CCD) designed for a wide range of image sensing applications. The sensor incorporates true two−phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes a transparent gate electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Selectable on−chip output amplifiers allow operation to be optimized for different imaging needs: Low Noise (when using the high−sensitivity output) or Maximum Dynamic Range (when using the low−sensitivity output). The low dark current of the KAF−0261 makes this device suitable for low light imaging applications without sacrificing charge capacity. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD Number of Active Pixels 512 (H) x 512 (V) Pixel Size 20 mm (H) x 20 mm (V) Active Image Size 10.2 mm (H) x 10.2 mm (V) Chip Size 11.3 mm (H) x 11.6 mm (V) Optical Fill Factor 100% Output Sensitivity High Sensitivity Output High Dynamic Range Output 10 mV/electron 2.0 mV/electron Saturation Signal High Sensitivity Output High Dynamic Range 200,000 electrons 500,000 electrons Readout Noise (1 MHz) 22 electrons rms Dark Current (25°C, Accumulation Mode) < 30 pA/cm3 Dark Current Doubling Rate 6°C Dynamic Range (Sat Sig/Dark Noise) High Sensitivity Output 83 dB High Dynamic Range Output Range 87 dB Quantum Efficiency (450, 550, 650 nm) 35%, 55%, 58% Maximum Data Rate High Sensitivity Output High Dynamic Range Output 5 MHz 2 MHz Transfer Efficiency > 0.99997 Package CERDIP Package Cover Glass Clear or AR coated, 2 sides www.onsemi.com Figure 1. KAF−0261 CCD Image Sensor Features • True Two Phase Full Frame Architecture • Transparent Gate Electrode for High Sensitivity • 100% Fill Factor • Low Dark Current • User−selectable Outputs Allow either Low Noise or High Dynamic Range Operation • Single Readout Register • These Devices are Pb−Free and are RoHS Compliant Applications • Scientific Imaging |
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