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IS41C16256-50TI Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS41C16256-50TI
Description  256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS41C16256-50TI Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. J
06/29/00
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
IS41C16256
IS41LV16256
ISSI®
FEATURES
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode :
RAS-Only, CAS-before-RAS
(CBR), and Hidden
• JEDEC standard pinout
• Single power supply
5V ± 10% (IS41C16256)
3.3V ± 10% (IS41LV16256)
• Byte Write and Byte Read operation via two
CAS
• Extended Temperature Range -30
oC to 85oC
• Industrail Temperature Range -40
oC to 85oC
DESCRIPTION
The
ISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit
high-performanceCMOSDynamicRandomAccessMemory. Both
products offer accelerated cycle access EDO Page Mode. EDO
Page Mode allows 512 random accesses within a single row with
access cycle time as short as 10ns per 16-bit word. The Byte Write
control, of upper and lower byte, makes the IS41C16256 and
IS41LV16256idealforusein16and32-bitwidedatabussystems.
These features make the IS41C16256 and IS41LV1626 ideally
suited for high band-width graphics, digital signal processing,
high-performance computing systems, and peripheral applications.
The IS41C16256 and IS41LV16256 are packaged in 40-pin
400-mil SOJ and TSOP (Type II).
256K x 16
(4-MBIT) DYNAMIC RAM
JUNE 2000
WITH EDO PAGE MODE
KEY TIMING PARAMETERS
Parameter
-35
-50
-60
Unit
Max.
RAS Access Time (tRAC)
3550
60ns
Max.
CAS Access Time (tCAC)
1014
15ns
Max. Column Address Access Time (tAA)
1825
30ns
Min. EDO Page Mode Cycle Time (tPC)
1220
25ns
Min. Read/Write Cycle Time (tRC)
60
90
110
ns
PIN CONFIGURATIONS
40-Pin TSOP (Type II)
40-Pin SOJ
PIN DESCRIPTIONS
A0-A8
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND


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